SI8415DB Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si8415DB
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-To-Ambient
80
0.3
I_D = 250 mA
60
0.2
0.1
40
0.0
20
−0.1
−0.2
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
100
*r_DS(on) Limited
Safe Operating Area
I_DM Limited
10
P(t) = 0.001
1
I_D(on)
Limited
0.1
T_A = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
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4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 72_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 73210
S-50037—Rev. A, 17-Jan-05