SI8415DB Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
Si8415DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.12
2500
Capacitance
0.10
0.08
0.06
V_GS = 1.8 V
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
25
I_D − Drain Current (A)
Gate Charge
5
V_DS = 6 V
4
I_D = 1 A
3
2
1
2000
C_iss
1500
1000
500
C_rss
0
0
2
C_oss
4
6
8
10
12
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
V_GS = 4.5 V
I_D = 1 A
1.2
1.1
1.0
0.9
0
0
5
10
15
20
25
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0.8
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
T_J = 25_C
0.08
0.06
0.04
0.02
I_D = 1 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD − Source-to-Drain Voltage (V)
Document Number: 73210
S-50037—Rev. A, 17-Jan-05
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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