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SI8409DB Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
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Si8409DB
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.5
ID = 250 mA
Single Pulse Power, Juncion-To-Ambient
80
0.4
60
0.3
0.2
40
0.1
0.0
20
−0.1
−0.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
100 600
Safe Operating Area
100
IDM Limited
* rDS(on) Limited
10
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
TA = 25_C
Single Pulse
0.01
BVDSS Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 72_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73111
S-41816—Rev. A, 11-Oct-04
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