SI8409DB Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si8409DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
1500
Capacitance
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
V_GS = 2.5 V
5
10
V_GS = 4.5 V
15
20
25
1200
C_iss
900
600
300
C_oss
C_rss
0
0
5
10
15
20
25
30
I_D − Drain Current (A)
V_DS − Drain-to-Source Voltage (V)
Gate Charge
5
V_DS = 10 V
4
I_D = 1 A
3
2
1
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.6
1.5
V_GS = 4.5 V
1.4
I_D = 1 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
0.06
I_D = 1 A
0.04
T_J = 25_C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD − Source-to-Drain Voltage (V)
Document Number: 73111
S-41816—Rev. A, 11-Oct-04
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
www.vishay.com
3