SI8409DB Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si8409DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.046 @ V_GS = −4.5 V
−30
0.065 @ V_GS = −2.5 V
I_D (A)
−6.3
−5.3
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8409
xxx
S
4
G
1
Q_g (Typ)
17
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area, Profile (0.62 mm) and
On-Resistance Per Footprint Area
D Pin Compatible to Si8401DB
APPLICATIONS
D Load Switch, Battery Switch, and PA Switch for
Portable Devices
S
G
Device Marking: 8409
xxx = Date/Lot Traceability Code
Ordering Information: Si8409DB-T1—E1
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Package Reflow Conditions^b
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
VPR
IR/Convection
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
"12
−6.3
−4.6
−5.1
−3.7
−25
−2.5
−1.3
2.77
1.47
1.77
0.94
−55 to 150
215
220
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 73111
S-41816—Rev. A, 11-Oct-04
Symbol
R_thJA
R_thJF
Typical
35
72
16
Maximum
45
85
20
Unit
_C/W
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