SI8401DB Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si8401DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-To-Ambient
80
0.3
I_D = 250 mA
60
0.2
0.1
40
0.0
20
−0.1
−0.2
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 72_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
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4
10^−2
10^−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71674
S-40384—Rev. F, 01-Mar-04