SI8401DB Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si8401DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.065 @ V_GS = −4.5 V
−20
0.095 @ V_GS = −2.5 V
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8401
xxx
S
4
G
1
Ordering Information: Si8401DB-T1
Si8401DB-T1—E3 (Lead Free)
I_D (A)
−4.9
−4.1
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
D Pin Compatible to Industry Standard Si3443DV
APPLICATIONS
D PA, Battery and Load Switch
D Battery Charger Switch
D PA Switch
S
Device Marking: 8401
xxx = Date/Lot Traceability Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−20
V_GS
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Package Reflow Conditions^b
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
VPR
IR/Convection
I_D
I_DM
I_S
P_D
T_J, T_stg
−4.9
−3.6
−3.9
−2.8
−10
−2.5
−2.5
2.77
1.47
1.77
0.94
−55 to 150
215/245^c
220/250^c
Unit
V
A
W
_C
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
c. Package reflow conditions for lead-free.
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
Symbol
R_thJA
R_thJF
Typical
35
72
16
Maximum
45
85
20
Unit
_C/W
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