SI8401DB Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si8401DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
1500
Capacitance
0.12
0.09
0.06
V_GS = 2.5 V
V_GS = 4.5 V
0.03
0.00
0
1
2
3
4
5
6
7
I_D − Drain Current (A)
Gate Charge
10
V_DS = 10 V
8
I_D = 1 A
1200
C_iss
900
600
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 1 A
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
1
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.30
0.24
0.18
I_D = 1 A
0.12
0.06
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
0.00
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
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