SI7971DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si7971DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Junction-to-Ambient
30
0.3
24
I_D = 450 mA
0.2
18
0.1
12
0.0
6
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
100 1000
10
1
I_D(on)
Limited
0.1
T_A = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
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4
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 60_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72357
S-31610—Rev. A, 11-Aug-03