SI7971DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si7971DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
5000
Capacitance
0.05
0.04
0.03
V_GS = 1.8 V
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
4000
3000
2000
1000
C_rss
C_iss
C_oss
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
5
V_DS = 6 V
I_D = 11.7 A
4
Gate Charge
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 11.7 A
1.4
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72357
S-31610—Rev. A, 11-Aug-03
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
I_D = 3.5 A
0.02
I_D = 11.7 A
0.01
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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