SI7971DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si7971DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 450 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 9.6 V, V_GS = 0 V
V_DS = - 9.6 V, V_GS = 0 V, T_J = 55_C
V_DS v - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 11.7 A
V_GS = - 2.5 V, I_D = - 10.6 A
V_GS = - 1.8 V, I_D = - 3.5 A
V_DS = - 15 V, I_D = - 11.7 A
I_S = - 2.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 11.7 A
V_DD = - 6 V, R_L = 6 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 2.9 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 0.40
- 1.0
V
"100
nA
-1
mA
-5
- 30
A
0.014
0.018
0.018
0.022
W
0.023
0.029
37
S
- 0.7
- 1.2
V
39
60
6.5
nC
10
9.4
W
38
60
60
90
280
420
ns
210
320
120
180
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 10 thru 2 V
24
18
12
1.5 V
6
1V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
30
24
18
12
6
0
0.0
T_C = 125_C
25_C
- 55_C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72357
S-31610—Rev. A, 11-Aug-03