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SI7970DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET
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Si7970DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power
100
0.2
80
−0.0
ID = 250 mA
−0.2
60
−0.4
40
−0.6
−0.8
20
−1.0
−1.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.001 0.01 0.1
1
10
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
IDM
rDS(on) Limited
Limited
10
1
ID(on)
Limited
0.1
TA = 25_C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
VDS − Drain-to-Source Voltage (V)
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 60_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72826
S-40431—Rev. A, 15-Mar-04
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