SI7970DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7970DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 40 V, V_GS = 0 V
V_DS = 40 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 10.2 A
V_GS = 4.5 V, I_D = 8.7 A
V_DS = 15 V, I_D = 10.2 A
I_S = 2.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS =20 V, V_GS = 10 V, I_D = 10.2 A
f = 1 MHz
V_DD = 20 V, R_L = 20 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
1
3
V
"100
nA
1
mA
5
30
A
0.016
0.019
W
0.021
0.026
26
S
0.8
1.2
V
23
35
4.4
nC
5.6
1
2.3
3.9
W
15
25
15
25
50
75
ns
16
25
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
8
0
0
www.vishay.com
2
Output Characteristics
V_GS = 10 thru 6 V
5V
4V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
40
32
24
16
8
0
0
T_C = 125_C
25_C
−55_C
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72826
S-40431—Rev. A, 15-Mar-04