SI7970DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

New Product
Si7970DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
2000
Capacitance
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
8
16
24
32
40
I_D − Drain Current (A)
Gate Charge
10
V_DS = 20 V
I_D = 10.2 A
8
6
4
2
0
0
5
10
15
20
25
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72826
S-40431—Rev. A, 15-Mar-04
1600
C_iss
1200
800
C_oss
400
C_rss
0
0
10
20
30
40
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 10.2 A
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
I_D = 10.2 A
0.03
0.02
0.01
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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