SI7960DP_15 Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

Si7960DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
0.4
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 1.4
- 50 - 25
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
80
60
40
20
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by R_DS(on)*
I_DM Limited
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^-4
10 ^-3
www.vishay.com
4
10
100 µs
1
I_D(on)
Limited
1 ms
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
0.01
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
No te s:
P _DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 60 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^-2
10 ^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 73075
S09-0223-Rev. B, 09-Feb-09