SI7960DP_15 Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

Si7960DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
4000
0.025
0.020
V_GS = 4.5 V
3500
3000
C_iss
2500
0.015
0.010
0.005
V_GS = 10 V
2000
1500
1000
C_oss
C_rss
500
0.000
0
5 10 15 20 25 30 35 40
0
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 20 V
I_D = 9.7 A
8
6
4
1.8
V_GS = 10 V
1.6
I_D = 9.7 A
1.4
1.2
1.0
2
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (° C)
On-Resistance vs. Junction Temperature
40
0.05
T_J = 150 °C
10
0.04
0.03
I_D = 9.7 A
0.02
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.01
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
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