English
Language : 

SI7960DP_15 Datasheet, PDF (1/13 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET
Dual N-Channel 60-V (D-S) MOSFET
Si7960DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.021 at VGS = 10 V
60
0.025 at VGS = 4.5 V
ID (A)
9.7
8.9
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package
• Dual MOSFET for Space Savings
PowerPAK SO-8
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7960DP-T1-E3 (Lead (Pb)-free)
Si7960DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
9.7
6.2
7.8
5.0
Pulsed Drain Current
IDM
40
A
Continuous Source Current (Diode Conduction)a
IS
2.9
1.2
Single Avalanche Current
L = 0.1 mH
IAS
23
Single Avalanche Energy
EAS
27
mJ
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.5
1.4
2.2
0.9
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
Symbol
RthJA
Typical
26
60
Maximum
35
85
Unit
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.2
2.7
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
1
 ▷