SI7938DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

New Product
Si7938DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.016
10
T_J = 150 °C
1
T_J = 25 °C
0.012
0.008
0.004
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
I_D = 250 µA
1.7
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
1.4
30
1.1
20
0.8
10
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
100 ms
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
0.01
T_A = 25 °C
Single Pulse
0.1
1
BVDSS
Limited
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65365
S09-1923-Rev. A, 28-Sep-09