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SI7938DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET
New Product
Si7938DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
VGS = 10 V thru 4 V
8
60
VGS = 3 V
6
40
4
TC = 125 °C
TC = - 55 °C
20
0
0.0
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
0.007
0.006
0.005
VGS = 4.5 V
VGS = 10 V
0.004
0
20
40
60
80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 18.5 A
8
VDS = 20 V
6
VDS = 10 V
4
VDS = 30 V
2
2
TC = 25 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
Ciss
2400
1800
1200
Coss
600
Crss
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
2.1
ID = 18.5 A
1.7
VGS = 10 V
1.3
VGS = 4.5 V
0.9
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65365
S09-1923-Rev. A, 28-Sep-09
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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