SI7898DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7898DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
200
Single Pulse Power, Juncion-To-Ambient
0.5
160
I_D = 250 mA
0.0
120
–0.5
80
–1.0
40
–1.5
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
10
Limited by
r_DS(on)
10 ms
100 ms
2
1
Duty Cycle = 0.5
1
1 ms
10 ms
0.1
0.01
0.01
T_C = 25_C
Single Pulse
100 ms
1s
10 s
100 s, dc
0.1
1
10
100 1000
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
www.vishay.com
4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = _C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 71873
S-20827—Rev. A, 17-Jun-02