SI7898DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7898DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 120 V, V_GS = 0 V
V_DS = 120 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 3.5 A
V_GS = 6.0 V, I_D = 3.0 A
V_DS = 15 V, I_D = 5 A
I_S = 2.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 75 V, V_GS = 10 V, I_D = 3.5 A
V_DD = 75 V, R_L = 21 W
I_D ^ 3.5 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.5 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0
4.0
V
"100
nA
1
mA
5
25
A
0.068
0.085
W
0.076
0.095
15
S
0.75
1.2
V
17
21
3.2
nC
6.0
9.0
14
10
15
ns
24
35
17
25
0.85
W
45
70
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
25
20
15
10
5
0
0
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2
Output Characteristics
V_GS = 10 thru 6 V
5V
3, 4 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transfer Characteristics
25
20
15
10
5
0
0
T_C = 125_C
25_C
–55_C
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Document Number: 71873
S-20827—Rev. A, 17-Jun-02