SI7898DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

New Product
Si7898DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
1200
Capacitance
0.12
0.09
0.06
0.03
V_GS = 6 V
V_GS = 10 V
0.00
0
5
10
15
20
25
I_D – Drain Current (A)
Gate Charge
20
V_DS = 75 V
I_D = 3.5 A
16
12
8
4
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
C_iss
900
600
300
C_rss
C_oss
0
0
30
60
90
120
150
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
3.0
V_GS = 10 V
2.5
I_D = 3.5 A
2.0
1.5
1.0
0.5
0.0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
I_D = 3.5 A
0.15
0.10
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71873
S-20827—Rev. A, 17-Jun-02
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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