SI7860ADP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel Reduced, Fast Switching MOSFET

Si7860ADP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
Single Pulse Power, Juncion-To-Ambient
200
I_D = 250 mA
0.3
160
0.0
120
- 0.3
80
- 0.6
40
- 0.9
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by
r_DS(on)
10
1
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 125_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72651
S-32674—Rev. A, 29-Dec-03