SI7860ADP Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel Reduced, Fast Switching MOSFET

New Product
Si7860ADP
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0095 @ V_GS = 10 V
0.0125 @ V_GS = 4.5 V
I_D (A)
16
16
PowerPAK SO-8
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for High Efficiency
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% R_g Tested
APPLICATIONS
D Buck Converter
- High Side or Low Side
D Synchronous Rectifier
- Secondary Rectifier
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7860ADP-T1-E3
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
16
11
13
8
"50
4.1
1.5
4.8
1.8
3.1
1.1
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72651
S-32674—Rev. A, 29-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
21
56
1.9
Maximum
26
70
2.5
Unit
_C/W
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