SI7860ADP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel Reduced, Fast Switching MOSFET

New Product
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance vs. Drain Current
2500
Capacitance
0.012
0.009
V_GS = 4.5 V
V_GS = 10 V
2000
C_iss
1500
0.006
0.003
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
6
5
V_DS = 15 V
I_D = 16 A
4
3
2
1
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
1000
C_oss
500
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.00
1.75
V_GS = 10 V
I_D = 16 A
1.50
1.25
1.00
0.75
0.50
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.040
T_J = 150_C
10
T_J = 25_C
0.032
0.024
0.016
0.008
I_D = 16 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72651
S-32674—Rev. A, 29-Dec-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3