SI7846DP-T1-GE3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
100
0.5
I_D = 250 µA
10
0.0
- 0.5
- 1.0
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
125 °C
25 °C
1
0.1
10^-5
10^-4
10^-3
10^-2
10^-1
1
t_in (s)
Avalanche Current vs. Time
80
60
40
20
2
1
Duty Cycle = 0.5
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 52 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09