SI7846DP-T1-GE3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7846DP
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 150 V, V_GS = 0 V
V_DS = 150 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 5 A
Forward Transconductance^a
g_fs
V_DS = 15 V, I_D = 5 A
Diode Forward Voltage^a
V_SD
I_S = 2.8 A, V_GS = 0 V
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
V_DS = 75 V, V_GS = 10 V, I_D = 5 A
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 75 V, R_L = 15 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_g = 6 Ω
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
I_F = 2.8 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
2.0
4.5
V
± 100
nA
1
µA
5
50
A
0.041 0.050
Ω
18
S
0.75
1.1
V
30
36
8.5
nC
8.5
0.2
0.85
1.4
Ω
12
18
7
11
22
33
ns
10
15
40
70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
V_GS = 10 V thru 7 V
40
40
6V
30
30
20
10
5V
3 V, 4 V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
T_C = 125 °C
10
25 °C
- 55 °C
0
0
1
2
3
4
5
6
7
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 71442
S09-0537-Rev. F, 06-Apr-09