SI7846DP-T1-GE3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
3000
0.08
0.06
0.04
V_GS = 10 V
0.02
0.00
0
10
20
30
40
50
I _D - Drain Current (A)
On-Resistance vs. Drain Current
2500
2000
C_iss
1500
1000
500
C_rss
0
0
30
C_oss
60
90
120
150
V_DS - Drain-to-Source Voltage (V)
Capacitance
20
V_DS = 75 V
I_D = 5 A
16
2.5
V_GS = 10 V
I_D = 5 A
2.0
12
1.5
8
1.0
4
0.5
0
0
15
30
45
60
Q_g - Total Gate Charge (nC)
Gate Charge
50
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.15
T_J = 150 °C
10
0.12
0.09
I_D = 5 A
0.06
T_J = 25 °C
0.03
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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