SI7806DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7806DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
Single Pulse Power, Juncion-To-Ambient
50
0.4
I_D = 250 mA
40
0.2
–0.0
30
–0.2
–0.4
20
–0.6
10
–0.8
–1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
2
1
Duty Cycle = 0.5
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
I_D(on)
1 ^Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_C = 25_C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71869
S-20805—Rev. A, 17-Jun-02