SI7806DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

New Product
Si7806DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
1400
Capacitance
0.020
0.015
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
1200
1000
800
600
400
C_rss
200
C_iss
C_oss
0.000
0
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 15 V
8
I_D = A
6
4
2
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 14.4 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.025
0.020
0.015
I_D = 5 A
I_D = 14.4 A
T_J = 25_C
0.010
0.005
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
0.000
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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