SI7806DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

New Product
Si7806DN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
30
0.011 @ V_GS = 10 V
0.0175 @ V_GS = 4.5 V
I_D (A)
14.4
12.6
PowerPAKt 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D DC/DC Converters
– Secondary Synchronous Rectifier
– High-Side MOSFET in Synchronous Buck
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
14.4
9.2
11.6
7.4
40
3.2
1.3
3.8
1.5
2.0
0.8
–55 to 150
Unit
V
A
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
Symbol
R_thJA
R_thJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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