SI7620DN-T1-GE3 Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.40
0.32
I_D = 3.6 A
10
T_J = 150 °C
T_J = 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4.2
3.8
3.4
I_D = 250 µA
3.0
2.6
2.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.24
T_J = 125 °C
0.16
T_J = 25 °C
0.08
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power (Junction-to-Ambient)
BVDSS
Limited
100 µs
1
1 ms
10 ms
0.1
100 ms
T_A = 25 °C
Single Pulse
0.01
0.1
1
10
1s
10 s
DC
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68702
S-81215-Rev. A, 02-Jun-08