SI7620DN-T1-GE3 Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
V_GS = 10 thru 7 V
12
4
V_GS = 6 V
9
3
6
2
Si7620DN
Vishay Siliconix
T_C = 25 °C
3
0
0.0
0.14
V_GS = 5 V
V_GS = 4 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.13
0.12
0.11
0.10
V_GS = 10 V
0.09
0.08
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 3.6 A
8
V_DS = 75 V
6
V_DS = 125 V
4
1
0
2
800
600
T_C = 125 °C
T_C = - 55 °C
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
400
200
C_oss
C_rss
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.4
I_D = 3.6 A
2.0
V_GS = 10 V
1.6
1.2
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
www.vishay.com
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