SI7620DN-T1-GE3 Datasheet, PDF (2/13 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7620DN
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_D = 250 µA
V_DS = V_GS , I_D = 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = 150 V, V_GS = 0 V
V_DS = 150 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 3.6 A
V_DS = 15 V, I_D = 3.6 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 75 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = 75 V, V_GS = 10 V, I_D = 3.6 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 75 V, R_L = 26 Ω
I_D ≅ 2.9 A, V_GEN = 10 V, R_g = 1 Ω
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
T_C = 25 °C
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
I_S = 2.9 A, V_GS = 0 V
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = 2.9 A, dI/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
150
2.5
13
Typ. Max. Unit
180
-9
0.103
10
V
mV/°C
4.5
V
± 100
nA
1
µA
5
A
0.126
Ω
S
600
50
pF
15
9.5
15
3
nC
2.5
1.1
2.2
Ω
12
20
5
10
ns
15
25
5
10
13
A
15
0.8
1.2
V
50
75
ns
125
190
nC
37
ns
13
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68702
S-81215-Rev. A, 02-Jun-08