SI7611DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

Si7611DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.058
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.048
0.038
I_D = 9.3 A
T_A = 125 °C
0.01
0.001
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.028
T_A = 25 °C
0.018
3
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.4
60
50
2.1
40
1.8
30
I_D = 250 µA
20
1.5
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
0.01
0.1
T_A = 25 °C
Single Pulse
1
BVDSS
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69939
S-80895-Rev. B, 21-Apr-08