SI7611DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
4
V_GS = 10 thru 4.5 V
V_GS = 4 V
30
3
Si7611DN
Vishay Siliconix
20
10
0
0
0.030
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.027
V_GS = 4.5 V
0.024
0.021
V_GS = 10 V
0.018
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 9.3 A
8
V_DS = 20 V
6
V_DS = 32 V
4
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69939
S-80895-Rev. B, 21-Apr-08
2
1
0
0
3000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
C_iss
1800
1200
600
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
V_GS = 10 V, I_D = 9.3 A
1.4
1.1
V_GS = 4.5 V, I_D = 8.1 A
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3