SI7611DN Datasheet, PDF (1/13 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

New Product
P-Channel 40-V (D-S) MOSFET
Si7611DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.025 at V_GS = - 10 V
- 40
0.033 at V_GS = - 4.5V
I_D (A)
- 18^e
- 18^e
Q_g (Typ.)
41 nC
PowerPAK 1212-8
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• Low Thermal Resistance PowerPAK^®
Package with Small Size and Low 1.07 mm
Profile
• 100 % R_g and UIS Tested
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7611DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
- 40
V
± 20
- 18^e
- 18^e
- 9.3^{a, b}
- 7.4^{a, b}
A
- 20
- 18^e
- 3^{a, b}
- 23
26
mJ
T_C = 25 °C
39
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
25
3.7^{a, b}
W
T_A = 70 °C
2.4^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 50 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 69939
S-80895-Rev. B, 21-Apr-08
www.vishay.com
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