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SI7478DP_09 Datasheet, PDF (4/12 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET
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Si7478DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
100
0.4
ID = 250 µA
80
0.2
0.0
60
- 0.2
- 0.4
40
- 0.6
20
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
IDM
100
Limited
Limited by RDS(on)*
10
ID(on)
1 Limited
1 ms
10 ms
100 ms
1s
0.1
TA = 25 °C
Single Pulse
10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 52 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 72913
S09-0271-Rev. D, 16-Feb-09
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