SI7478DP_09 Datasheet, PDF (2/12 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7478DP
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
R_DS(on)
g_fs
V_SD
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 18.5 A
V_DS = 15 V, I_D = 20 A
I_S = 4.5 A, V_GS = 0 V
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
V_DS = 30 V, V_GS = 10 V, I_D = 20 A
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 30 V, R_L = 30 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
I_F = 4.5 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
1.0
3.0
V
± 100
nA
1
µA
5
40
A
0.006 0.0075
Ω
0.007 0.0088
63
S
0.76
1.2
V
105
160
22
nC
19
0.5
1.0
1.5
Ω
25
40
20
30
115
175
ns
45
70
41
70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
50
V_GS = 10 V thru 4 V
50
40
40
30
30
20
10
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
T_C = 125 °C
10
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 72913
S09-0271-Rev. D, 16-Feb-09