SI7478DP_09 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7478DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.012
10000
0.010
0.008
V_GS = 4.5 V
0.006
0.004
V_GS = 10 V
0.002
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 30 V
8
I_D = 20 A
6
4
2
8000
C_iss
6000
4000
2000
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 20 A
1.4
1.2
1.0
0.8
0
0
20
40
60
80
100 120
Qg - Total Gate Charge (nC)
Gate Charge
60
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.020
T_J = 150 °C
10
T_J = 25 °C
0.016
0.012
0.008
0.004
I_D = 20 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72913
S09-0271-Rev. D, 16-Feb-09
www.vishay.com
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