SI7478DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7478DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.6
0.4
0.2
- 0.0
I_D = 250 µA
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (˚C)
Threshold Voltage
100
80
60
40
20
0
0.01
0.1
1
10
100 600
Time (sec)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
100
r_DS(on) Limited
10
I_D(on)
1 ^Limited
I_DM
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T_A = 25˚C
Single Pulse
0.01
0.1
BV_DSS Limited
1
10
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
P(t) = 1
P(t) = 10
dc
100
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
Single Pulse
10- ³
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
t₂
R_thJA
=
52˚C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72913
S-51566-Rev. B, 07-Nov-05