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SI7478DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET
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Si7478DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55°C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 18.5 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 20 A
Diode Forward Voltagea
VSD
IS = 4.5 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 30 V, VGS = 10 V, ID = 20 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 4.5 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max
Unit
1.0
3.0
V
±100
nA
1
µA
5
40
A
0.006 0.0075
Ω
0.007 0.0088
63
S
0.76
1.2
V
105
160
22
nC
19
0.5
1.0
1.5
Ω
25
40
20
30
115
175
ns
45
70
41
70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless noted
60
50
VGS = 10 thru 4 V
40
30
20
10
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
60
50
40
30
20
TC = 125˚C
10
25˚C
- 55˚C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 72913
S-51566-Rev. B, 07-Nov-05
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