SI7478DP Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

New Product
N-Channel 60-V (D-S) MOSFET
Si7478DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.0075 @ V_GS = 10 V
60
0.0088 @ V_GS = 4.5 V
I_D (A)
20
18.5
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7478DP-T1—E3 (Lead (Pb)-Free)
FEATURES
• TrenchFET^® Power MOSFET
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07-mm Profile
• 100 % R_g Tested
APPLICATIONS
• Automotive Such As:
- High-Side Switch
- Motor Drives
- 12-V Boardnet
RoHS
COMPLIANT
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
±20
Continuous Drain Current (T_J = 150°C)^a
T_A = 25°C
T_A = 70°C
I_D
20
16
15
12
Pulsed Drain Current
I_DM
60
A
Continuous Source Current (Diode Conduction)^a
I_S
4.5
1.6
Avalanche Current
I_AS
35
Avalanche Energy
E_AS
61
mJ
Maximum Power Dissipation^a
T_A = 25°C
T_A = 70°C
P_D
5.4
1.9
3.4
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
–55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 sec
Steady State
R_thJA
18
52
23
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
1.0
1.3
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
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