SI7463ADP Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

New Product
Si7463ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.040
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.032
0.024
0.016
I_D = 15 A
T_J = 125 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.008
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
200
0.6
0.4
0.2
0.0
- 0.2
I_D = 250 μA
160
120
I_D = 5 mA
80
40
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
I_DM Limited
Limited
10 _ID
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
1
Limited by R_DS(on)*
10 ms
100 ms
1s
0.1
10 s
T_C = 25 °C
Single Pulse
BVDSS Limited ^DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
www.vishay.com
Document Number: 63354
4
S11-1661-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000