SI7463ADP Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7463ADP
Vishay Siliconix
70
10
V_GS = 10 V thru 4 V
56
8
42
28
14
0
0.0
0.015
V_GS = 3 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
T_C = 25 °C
4
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6500
0.013
0.011
V_GS = 4.5 V
5200
C_iss
3900
0.009
0.007
V_GS = 10 V
0.005
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 20 V
6
V_DS = 10 V
4
V_DS = 30 V
2
00
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
2600
1300
C_rss
C_oss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
1.4
1.1
V_GS = 10 V
V_GS = 4.5 V
0.8
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63354
www.vishay.com
S11-1661-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000