SI7450DP Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si7450DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
Single Pulse Power, Juncion-To-Ambient
100
0.5
80
I_D = 250 mA
0.0
60
–0.5
40
–1.0
20
–1.5
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
2
1
Duty Cycle = 0.5
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 68_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 71432
S-03475—Rev. B, 16-Apr-01