SI7450DP Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
N-Channel 200-V (D-S) MOSFET
Si7450DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
200
r_DS(on) (W)
0.080 @ V_GS = 10 V
0.090 @ V_GS = 6 V
I_D (A)
5.3
5.0
PowerPAKt SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V DC/DC
D Industrial and 42-V Automotive
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
I_S
P_D
T_J, T_stg
200
"20
5.3
3.2
4.3
2.6
40
15
4.3
1.6
5.2
1.9
3.3
1.2
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71432
S-03475—Rev. B, 16-Apr-01
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
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