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SI7450DP Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET
Si7450DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 4.0 A
VGS = 6.0 V, ID = 4.0 A
VDS = 15 V, ID = 5 A
IS = 2.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 100 V, VGS = 10 V, ID = 4.0 A
VDD = 100 V, RL = 25 W
ID ^ 4.0 A, VGEN = 10 V, RG = 6 W
IF = 2.8 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0
V
"100
nA
1
mA
5
40
A
0.065
0.080
W
0.070
0.090
19
S
0.75
1.2
V
34
42
7.5
nC
12.0
14
20
20
30
ns
32
50
25
35
0.85
W
70
100
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
8
0
0
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2
Output Characteristics
VGS = 10 thru 6 V
5V
4V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
40
35
30
25
20
15
10
5
0
0
TC = 125_C
25_C
–55_C
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Document Number: 71432
S-03475—Rev. B, 16-Apr-01