SI7415DN-T1-GE3 Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

Si7415DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50
0.6
I_D = 250 µA
40
0.4
30
0.2
20
0.0
- 0.2
10
- 0.4
- 50 - 25
2
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-⁴
10-³
10-²
10-¹
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71691.
www.vishay.com
4
Document Number: 71691
S-83043-Rev. E, 22-Dec-08