SI7415DN-T1-GE3 Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

Si7415DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
1200
0.16
0.12
0.08
V_GS = 4.5 V
0.04
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 30 V
8
I_D = 5.7 A
6
4
2
1000
C_iss
800
600
400
200
C_rss
C_oss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V
I_D = 5.7 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
Gate Charge
20
T_J = 150 °C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
0.16
I_D = 5.7 A
0.12
0.08
T_J = 25 °C
0.04
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71691
S-83043-Rev. E, 22-Dec-08
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3